inchange semiconductor isc product specification isc silicon npn power transistor BD801 description collector-emitter sustaining voltage- : v ceo(sus) = 100v(min) low saturation voltage complement to type bd802 applications designed for a wide variety of medium-powe r switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. absolute maximum rating s (t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 5 v i c collector current-continuous 8 a i b b base current-continuous 3 a p c collector power dissipation t c =25 65 w t j junction temperature 150 t stg storage ttemperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.92 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BD801 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0 100 v v ce (sat) collector-emitter saturation voltage i c = 3a; i b = 0.3a b 1 v v be (on) base-emitter on voltage i c = 3a ; v ce = 2v 1.6 v i cbo collector cutoff current v cb = 100v; i e = 0 0.1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1 ma h fe-1 dc current gain i c = 1a ; v ce = 2v 30 h fe-2 dc current gain i c = 3a ; v ce = 2v 15 f t current-gain?bandwidth product i c = 0.25a ;v ce = 10v,f test = 1mhz 3 mhz isc website www.iscsemi.cn
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